50v-200v 2.0a byg22a thru BYG22D web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics controlled avalanche characteristic glass passivated junction low reverse current low forward voltage soft recovery characteristic very fast reverse recovery time good switching characteristics wave and reflow solderable absolute maximum ratings parameter test conditions type symbol value unit reverse voltage byg22a v r =v rrm 50 v g =repetitive peak reverse voltage byg22b v r =v rrm 100 v BYG22D v r =v rrm 200 v peak forward surge current t p =10ms, half sinewave i fsm 35 a average forward current i fav 2 a junction and storage temperature range t j =t stg 55...+150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =25 c e r 20 mj maximum thermal resistance parameter test conditions symbol value unit junction lead t l =const. r thjl 25 k/w junction ambient mounted on epoxyglass hard tissue r thja 150 k/w mounted on epoxyglass hard tissue, 50mm 2 35 m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35 m cu r thja 100 k/w super fast silicon mesa smd rectifier electrical characteristics parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 1 v g i f =2a v f 1.1 v reverse current v r =v rrm i r 1 a v r =v rrm , t j =100 c i r 10 a reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 25 ns
ratings and characteristic curves byg22a thru BYG22D e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 50v-200v 2.0a byg22a thru BYG22D super fast silicon mesa smd rectifier 0 40 80 120 160 0.01 0.1 1 10 100 i reverse current ( a ) r t j junction temperature ( c ) 200 94 9347 v r =v rrm figure 1. typ. reverse current vs. junction temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 94 9351 40 80 120 160 200 r thja =25k/w 100k/w 125k/w 150k/w figure 2. max. average forward current vs. ambient temperature 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 100 i forward current ( a ) f v f forward voltage ( v ) 3.0 94 9352 t j = 125 c 25 c 75 c figure 3. max. forward current vs. forward voltage 0 0.2 0.4 0.6 0.8 0 20 40 60 80 140 t reverse recovery time ( ns ) rr i f forward current ( a ) 1.0 94 9353 100 120 t amb = 125 c i r =0.5a, i r =0.125a 75 c 50 c 25 c 100 c figure 4. max. reverse recovery time vs. forward current 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9339 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc figure 6. thermal response
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